Optical and electrical step-recovery study of minority-carrier transport in an InGaN/GaN quantum-well light-emitting diode grown on sapphire

被引：12

作者：

Kaplar, RJ ^{[1
]}

Kurtz, SR ^{[1
]}

Koleske, DD ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 22期

关键词：

D O I：

10.1063/1.1828229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Forward-to-reverse bias step-recovery experiments were performed on an InGaN/GaN single-quantum-well light-emitting diode grown on sapphire. With the quantum well sampling the minority-carrier hole density at a single position, the optical emission displayed a two-stage decay. Using a solution to the diffusion equation to self-consistently describe both the optical and electrical recovery data, we estimated values for the hole lifetime (758+/-44 ns), diffusion length (588+/-45 nm), and mobility (0.18+/-0.02 cm(2)/V s) in GaN grown on sapphire. This low value of the minority-carrier mobility may reflect trap-modulated transport, and the lifetime is suggestive of slow capture and emission processes occurring through deep levels. (C) 2004 American Institute of Physics.

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页码：5436 / 5438

页数：3

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