Electrical characterization of the AlN/Si(111) system

被引：17

作者：

Ouisse, T

Schenk, HPD

Karmann, S

Kaiser, U

机构：

[1] ENSERG, Lab Phys Composants Semicond, UMR CNRS 5531, F-38016 Grenoble, France

[2] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

metal-insulator semiconductor structures; interface states; Poole-Frenkel emission; scanning electron microscopy; molecular beam epitaxy;

D O I：

10.4028/www.scientific.net/MSF.264-268.1389

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AIN has been used as an insulator to form MIS capacitors on Silicon. C-V, G-V and I-V measurements are used to investigate both the AlN/Si interface and the bulk AlN quality. The impact of the growth rate on the electrical characteristics is discussed. The current through the insulator is of the Poole-Frenkel type, with a trap energy around 0.815eV below the AlN conduction band.

引用

页码：1389 / 1392

页数：4

共 6 条

[1] THE ELECTRICAL AND COMPOSITIONAL PROPERTIES OF AIN-SI INTERFACES [J].

AHMED, AU ;

RYS, A ;

SINGH, N ;

EDGAR, JH ;

YU, ZJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (04) :1146-1151

[2]

Harris CI, 1996, INST PHYS CONF SER, V142, P777

[3]

Jonscher A.K., 1967, Thin Solid Films, V1, P213, DOI DOI 10.1016/0040-6090(67)90004-1

[4]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[5]

SCHENK HPD, IN PRESS MAT SCI E B

[6] Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition [J].

Zhang, X ;

Walker, D ;

Saxler, A ;

Kung, P ;

Xu, J ;

Razeghi, M .

ELECTRONICS LETTERS, 1996, 32 (17) :1622-1623

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