Single photon emission from individual GaAs quantum dots

被引：62

作者：

Hours, J

Varoutsis, S

Gallart, M

Bloch, J

Robert-Philip, I

Cavanna, A

Abram, I

Laruelle, F

Gérard, JM

机构：

[1] CNRS, LPN, F-91460 Marcoussis, France

[2] Alcatel R&I, Opto, F-91460 Marcoussis, France

[3] CEA, DRFMC, SP2M, Nanophys & Semicond Lab, F-38054 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 14期

关键词：

D O I：

10.1063/1.1563050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on photon correlation measurements on a single quantum dot formed at fluctuations of the interface of a GaAs/GaAlAs quantum well. We demonstrate that under pulsed nonresonant excitation, the quantum dot emits a single photon per pulse. This shows that after the photon emission, there is no refill of the quantum dot by the nearby two-dimensional reservoir of delocalized states. The possibility of delivering Fourier transform limited single photons makes this system a good candidate for exciton- and photon-based quantum information processing schemes. (C) 2003 American Institute of Physics.

引用

收藏

页码：2206 / 2208

页数：3

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