Tetrabenzoporphyrin semiconductor for transistor applications

被引：16

作者：

Aramaki, S ^{[1
]}

Sakai, Y ^{[1
]}

Yoshiyama, R ^{[1
]}

Sugiyama, K ^{[1
]}

Ono, N ^{[1
]}

Mizuguchi, J ^{[1
]}

机构：

[1] Mitsubishi Chem Grp Sci & Technol Res Ctr, Aoba Ku, Yokohama, Kanagawa 2278502, Japan

来源：

ORGANIC FIELD-EFFECT TRANSISTORS III | 2004年 / 5522卷

关键词：

organic semiconductor; field effect transistor; tetrabenzoporphyrin; precursor; X-ray diffraction;

D O I：

10.1117/12.566540

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

An organic field effect transistor (FET) device based on a solution-processible tetrabenzoporphyrin (BP) has been developed. BP is derived from its precursor that is soluble in some organic solvents and gives an amorphous film of high quality by spin coating. A polycrystalline film of BP is obtained by thermal conversion of the precursor at about 200degrees C. The FET characteristics are found to largely depend on the purity, device structure, and fabrication process. The device performance was: mobility of 1.7 X 10(-2) cm(2)/Vs and on/off ratio of 10(5). We have also analyzed the crystal structure of BP and characterized its electronic and morphological properties.

引用

页码：27 / 35

页数：9

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