Electron-spin polarization in magnetically modulated quantum structures

The spin-dependent electron resonant tunneling through magnetically modulated quantum structures has been investigated with and without an external electric field. The spin polarization is found to be strongly dependent on the magnetic configuration, the applied bias, the incident electron energy, and the incident wave vector. It is shown that an unpolarized beam of conducting electrons can be strongly polarized for an electron tunneling through magnetic-barrier structures, which is an arrangement with unidentical magnetic barriers and wells. The external electric field greatly changes the spin polarization of electrons for small electronic energies, where the electron-spin polarization exhibits considerable wave-vector-dependent features.