Comment on "Pulsed laser deposition and properties of Mn+1AXx phase formulated Ti3SiC2 thin films''

被引:12
作者
Eklund, P [1 ]
Palmquist, JP
Wilhelmsson, O
Jansson, U
Emmerlich, J
Högberg, H
Hultman, L
机构
[1] Linkoping Univ, IFM, Dept Phys, Thin Film Phys Div, SE-58183 Linkoping, Sweden
[2] Uppsala Univ, Dept Chem Mat, Angstrom Lab, SE-75121 Uppsala, Sweden
关键词
Ti3SiC2; MAX phase; titanium carbide; thin films; pulsed laser deposition; X-ray diffraction; transmission electron microscopy;
D O I
10.1007/s11249-004-8112-y
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
A recent paper by Hu et al. claimed synthesis of the MAX-phase Ti3SiC2 at 100 - 300 degreesC using pulsed laser deposition. In this comment, we find that the evidence presented by Hu et al. is insufficient to show Ti3SiC2 formation. In fact, there is a simpler interpretation of their results from X-ray diffraction and transmission electron microscopy, namely that the material produced is a cubic TiC-based compound.
引用
收藏
页码:977 / 978
页数:2
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