Resizing rules for the reuse of MOS analog designs

被引:6
作者
Montoro, CG [1 ]
Schneider, MC [1 ]
机构
[1] Univ Fed Santa Catarina, BR-88040900 Florianopolis, SC, Brazil
来源
13TH SYMPOSIUM ON INTEGRATED CIRCUITS AND SYSTEMS DESIGN, PROCEEDINGS | 2000年
关键词
D O I
10.1109/SBCCI.2000.876013
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a redesign procedure for analog circuits based on a scalable model of the MOSFET. A set of very simple expressions allows the calculation of transistor dimensions and bias for a given circuit in a new generation technology, starting from the circuit designed in an earlier technology.
引用
收藏
页码:89 / 93
页数:5
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