Ammonia pretreatment for high-κ dielectric growth on silicon

被引：26

作者：

Brewer, RT ^{[1
]}

Ho, MT

Zhang, KZ

Goncharova, LV

Starodub, DG

Gustafsson, T

Chabal, YJ

Moumen, N

机构：

[1] Rutgers State Univ, Dept Chem & Biol Chem, Piscataway, NJ 08854 USA

[2] Rutgers State Univ, Dept Phys & Astron, Surface Modificat Lab, Piscataway, NJ 08854 USA

[3] Int SEMATECH, Austin, TX 78741 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 17期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1807024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal nitridation of H/Si(100) surfaces with NH3 gas has been studied as a pretreatment for atomic layer deposition of Al2O3. The chemical nature of both the nitride interface and the Al2O3 growth was characterized using in situ transmission infrared spectroscopy and medium energy ion scattering. Nitride layers thicker than 3-4 A provide an effective barrier against interfacial SiO2 formation and promote the nucleation of Al2O3 growth. (C) 2004 American Institute of Physics.

引用

页码：3830 / 3832

页数：3

共 24 条

[1] ELECTRICAL CHARACTERIZATION OF CONDUCTIVE AND NONCONDUCTIVE BARRIER LAYERS FOR CU-METALLIZATION [J].

AHRENS, C ;

DEPTA, D ;

SCHITTHELM, F ;

WILHELM, S .

APPLIED SURFACE SCIENCE, 1995, 91 (1-4) :285-290

[2] Atomic transport during growth of ultrathin dielectrics on silicon [J].

Baumvol, IJR .

SURFACE SCIENCE REPORTS, 1999, 36 (1-8) :1-166

[3] Materials characterization of alternative gate dielectrics [J].

Busch, BW ;

Pluchery, O ;

Chabal, YJ ;

Muller, DA ;

Opila, RL ;

Kwo, JR ;

Garfunkel, E .

MRS BULLETIN, 2002, 27 (03) :206-211

[4] INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].

CHABAL, YJ ;

HIGASHI, GS ;

RAGHAVACHARI, K ;

BURROWS, VA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :2104-2109

[5] Infrared absorption studies of wet chemical oxides: Thermal evolution of impurities [J].

Chabal, YJ ;

Weldon, MK ;

Gurevich, AB ;

Christman, SB .

SOLID STATE PHENOMENA, 1999, 65-6 :253-256

[6] AMMONIA DECOMPOSITION ON SILICON SURFACES STUDIED USING TRANSMISSION FOURIER-TRANSFORM INFRARED-SPECTROSCOPY [J].

DILLON, AC ;

GUPTA, P ;

ROBINSON, MB ;

BRACKER, AS ;

GEORGE, SM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (04) :2222-2230

[7] ANNEALING OF DIAMOND ABOVE 800-DEGREES-C - NEED FOR AND RESULTS OF SI3N4 ENCAPSULATION [J].

FONTAINE, F ;

DENEUVILLE, A ;

LUCAZEAU, E ;

GHEERAERT, E ;

SAVALL, C ;

BRUYERE, JC .

[8]

Frank MM, 2003, MATER RES SOC SYMP P, V745, P41

[9] Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon [J].

Frank, MM ;

Chabal, YJ ;

Green, ML ;

Delabie, A ;

Brijs, B ;

Wilk, GD ;

Ho, MY ;

da Rosa, EBO ;

Baumvol, IJR ;

Stedile, FC .

APPLIED PHYSICS LETTERS, 2003, 83 (04) :740-742

[10] Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides [J].

Frank, MM ;

Chabal, YJ ;

Wilk, GD .

APPLIED PHYSICS LETTERS, 2003, 82 (26) :4758-4760

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