Skewness and kurtosis of 1/f noise in semiconductor devices

被引：6

作者：

Principato, F

Ferrante, G

机构：

[1] Fac Ingn, Unita Palermo, INFM, I-90128 Palermo, Italy

[2] Univ Palermo, Dipartimento Fis & Tecnol Relat, I-90128 Palermo, Italy

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 11期

关键词：

Auto-correlation functions;

D O I：

10.1016/S0026-2714(00)00067-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental investigation of the third and fourth moments of the 1/f noise of two different electronic devices is reported. The skewness and the kurtosis of the noise voltage data are estimated. Although the devices under investigation have similar noise power spectral density, the time waveforms are shown to have slightly different statistical properties. In both cases, a small deviation from Gaussian distribution is observed. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1969 / 1973

页数：5

共 9 条

[1]

Akabane H, 1997, NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, P601

[2] STOCHASTIC DOUBLE-QUANTUM RESONANCE IN THE PRESENCE OF PHASE-DIFFUSING OR PHASE-JUMP FIELD [J].