Infrared-induced emission from silicon quantum wires

被引：10

作者：

Bagraev, NT ^{[1
]}

Chaikina, EI

Klyachkin, LE

Markov, II

Gehlhoff, W

机构：

[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys, Arbeitsgrp EPR, D-12489 Berlin, Germany

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 02期

关键词：

D O I：

10.1006/spmi.1996.0452

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present the first findings of a study of infrared-induced emission from silicon quantum wires, which is due to the formation of a correlation gap in the DOS of the degenerate hole gas. The quantum wires in this case are created by an electrostatic confining potential inside ultra-shallow p-n junctions which are realized using controlled surface injection of self-interstitials and vacancies in the process of non-equilibrium boron diffusion. (C) 1998 Academic Press Limited.

引用

页码：337 / 344

页数：8

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