Properties of thin IrMn in exchange biased multilayers

被引:7
作者
Eckert, JC
Stern, NP
Snowden, DS
Sparks, PD
Carey, MJ
机构
[1] Harvey Mudd Coll, Dept Phys, Claremont, CA 91711 USA
[2] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
关键词
D O I
10.1063/1.1555331
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report striking behavior in thin IrMn exchange-biased heterostructures. We have studied exchange-biased multilayers with IrMn thicknesses from 2 to 80 Angstrom with 50-Angstrom Ti over- and underlayers. The resistance of spin valves with Si/50-Angstrom Ti/40-Angstrom NiFe/8-parallel to Co/30-Angstrom Cu/30-Angstrom Co/t(IrMn)/50-Angstrom Ti as a function of temperature shows anomalous behavior for 12 Angstrom<t(IrMn)<26 Angstrom. These features are not seen for spin valves in which the ferromagnetic layers are replaced with CoFe. To isolate the effects of the IrMn, resistance and magnetization versus temperature for structures of 50 Angstrom Ti/ t(IrMn) /50 Angstrom Ti were measured. Our measurements are suggestive of a model involving a mixed hcp/fcc phase of IrMn, in which the hcp phase undergoes a magnetic phase transition, and the resistance is influenced by a combination of the magnetic transition and the structural properties of the IrMn layer. (C) 2003 American Institute of Physics.
引用
收藏
页码:6608 / 6610
页数:3
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