Measurements of the sheet resistance and conductivity of thin epitaxial graphene and SiC films

被引：105

作者：

Krupka, J. ^{[1
]}

Strupinski, W. ^{[2
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期

关键词：

electric resistance measurement; graphene; semiconductor epitaxial layers; silicon compounds; surface resistance; wide band gap semiconductors;

D O I：

10.1063/1.3327334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single postdielectric resonators operating on their quasi TE(011) modes were used for the measurement of the surface resistance and conductivity of graphene films grown on semi-insulating SiC substrates. With this technique the surface resistance was measured with an uncertainty of +/- 5% and the conductivity was evaluated with an uncertainty equal to the uncertainty in determining the film thickness. The room temperature conductivity of the graphene films proved to be in the range 5x10(6) to 6.4x10(6) S/m.

引用

页数：3

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