Inter-valence-band hot hole laser in two-dimensional delta-doped homoepitaxial semiconductor structures

被引：2

作者：

Peale, R. E. ^{[1
]}

Dolguikh, M. V.

Muravjov, A. V.

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Univ Cent Florida, Coll Opt & Photon, Orlando, FL 32816 USA

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2007年 / 2卷 / 01期

关键词：

terahertz; far-infrared; laser; germanium; gallium arsenide;

D O I：

10.1166/jno.2007.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews, compares, and contrasts recent gain calculations for a laser concept in delta-doped p-Ge and p-GaAs. Gain is calculated using distribution functions, determined from Monte Carlo simulations, for hot holes in crossed electric and magnetic fields. The results suggest that Ge is the superior material when considering only the factor of optical gain, but the possibility of lasing in GaAs can take advantage of a wider range of growth opportunities.

引用

收藏

页码：51 / 57

页数：7

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