Multilayer electroluminescent device using organosilicon polymer as hole transport layer

被引:37
作者
Adachi, A [1 ]
Manhart, SA
Okita, K
Kido, JJ
Ohshita, J
Kunai, A
机构
[1] Japan High Polymer Ctr, Adv Polymer Lab, Ibaraki, Osaka 305, Japan
[2] Yamagata Univ, Dept Mat Sci & Engn, Yamagata 992, Japan
[3] Hiroshima Univ, Fac Engn, Dept Appl Chem, Higashihiroshima 724, Japan
关键词
electroluminescence; organosilicon; hole transport layer; aluminium complex;
D O I
10.1016/S0379-6779(98)80053-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Double-layer-type organic electroluminescent devices using organosilicon polymers, such as poly[4,4'-(1,2-dimethyl-1,2-diphenyldisilanylene)-phenylylene], poly[4,4'-(1,2-dimethyl-1,2-diphenyldisilanylene)-biphenylylene], poly[(1.2-dimethyl-1,2-diphenyl-1,2-disilanylene)-1,5-naphthylene] and poly[(1,2-tetraethyldisilanylene)-9,10-anthracene] (PDEDS-AN), as hole transport layers were fabricated, In these devices, tris( 8-quinolinolato) aluminum (III) complex (Alq) was used as an electron-transporting emitter layer and the effect of the pi-electron system of the polymers on device performance was investigated. Among the devices, the PDEDS-AN-based device exhibited the highest external quantum efficiency (QE) of about 0.2%. The low QE values of the organosilicon-based devices compared with that (0.8%) of the double-layer-type device having poly(N-vinylcarbazole) as a typical hole transport layer may be attributed to the poor electron-blocking properties of the organosilicon polymers. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:333 / 334
页数:2
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