Tuning the oxide/organic interface:: Benzene on SnO2(101)

被引：31

作者：

Batzill, M ^{[1
]}

Katsiev, K ^{[1
]}

Diebold, U ^{[1
]}

机构：

[1] Tulane Univ, Dept Phys, New Orleans, LA 70118 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 23期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1831565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two different SnO2(101) bulk terminations have been prepared in order to demonstrate the impact of the oxide surface composition on the interface properties between SnO2(101) and an organic film. The change in work function causes a rigid shift of the molecular orbitals of the condensed organic film by 1 eV with respect to the valence band of SnO2. This change in the band alignment between an organic film and an oxide electrode material allows tuning of the barriers for charge transfer across this interface in molecular electronics applications. (C) 2004 American Institute of Physics.

引用

收藏

页码：5766 / 5768

页数：3

相关论文

共 24 条

[1] Surface oxygen chemistry of a gas-sensing material:: SnO2(101) [J].

Batzill, M ;

Chaka, AM ;

Diebold, U .

EUROPHYSICS LETTERS, 2004, 65 (01) :61-67

[2]

BATZILL M, UNPUB

[3] Reduced SnO2 surfaces by first-principles calculations [J].

Bergermayer, W ;

Tanaka, I .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :909-911

[4] Influence of oxygen on band alignment at the organic/aluminum interface [J].

Blyth, RIR ;

Sardar, SA ;

Netzer, FP ;

Ramsey, MG .

APPLIED PHYSICS LETTERS, 2000, 77 (08) :1212-1214

[5] Band alignment in organic devices:: Photoemission studies of model oligomers on In2O3 [J].

Blyth, RIR ;

Duschek, R ;

Koller, G ;

Netzer, FP ;

Ramsey, MG .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (01) :270-275

[6] Thin films and interfaces of electroactive organic materials: The surface science approach [J].

Blyth, RIR ;

Duschek, R ;

Koller, G ;

Netzer, FP ;

Ramsey, MG .

MONATSHEFTE FUR CHEMIE, 2001, 132 (04) :509-518

[7] LAYER-BY-LAYER GROWTH OF EPITAXIAL SNO2 ON SAPPHIRE BY REACTIVE SPUTTER DEPOSITION [J].

CAVICCHI, RE ;

SEMANCIK, S ;

ANTONIK, MD ;

LAD, RJ .

APPLIED PHYSICS LETTERS, 1992, 61 (16) :1921-1923

[8] Band alignment at organic-inorganic semiconductor interfaces:: α-NPD and CuPc on InP(110) [J].

Chassé, T ;

Wu, CI ;

Hill, IG ;

Kahn, A .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) :6589-6592

[9] Improved band alignment for hole injection by an interfacial layer in organic light emitting devices [J].

Chkoda, L ;

Heske, C ;

Sokolowski, M ;

Umbach, E .

APPLIED PHYSICS LETTERS, 2000, 77 (08) :1093-1095

[10] Pulsed-electron-beam deposition of transparent conducting SnO2 films and study of their properties [J].

Choudhary, RJ ;

Ogale, SB ;

Shinde, SR ;

Kulkarni, VN ;

Venkatesan, T ;

Harshavardhan, KS ;

Strikovski, M ;

Hannoyer, B .

APPLIED PHYSICS LETTERS, 2004, 84 (09) :1483-1485