Investigations of hot-carrier-induced breakdown of thin oxides

被引：21

作者：

Kamakura, Y ^{[1
]}

Utsunomiya, H ^{[1
]}

Tomita, T ^{[1
]}

Umeda, K ^{[1
]}

Taniguchi, K ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect & Informat Syst, Suita, Osaka 565, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.649469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New oxide breakdown modes induced by hot carrier injection are presented. By using substrate hot electron and hot hole injection techniques, we demonstrate that the oxide damaged by hot carriers shows different breakdown characteristics compared with the case of conventional FN stress experiments. These new experiments reveal that the lifetime of oxide breakdown is not simply determined by the total number of injected holes.

引用

页码：81 / 84

页数：4