Application of synchrotron radiation to TXRF analysis of metal contamination on silicon wafer surfaces

被引：35

作者：

Pianetta, P ^{[1
]}

Baur, K

Singh, A

Brennan, S

Kerner, J

Werho, D

Wang, J

机构：

[1] Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA

[2] ARACOR, Sunnyvale, CA USA

[3] Balazs Analyt Labs, Sunnyvale, CA USA

来源：

THIN SOLID FILMS | 2000年 / 373卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

total reflection X-ray fluorescence; Stanford Synchrotron Radiation Laboratory; silicon wafer surfaces;

D O I：

10.1016/S0040-6090(00)01139-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Synchrotron radiation based total reflection X-ray fluorescence (TXRF) has been shown to meet the critical needs of the semiconductor industry for the analysis of transition metal impurities on silicon wafer surfaces. The current best detection limit achieved at the Stanford Synchrotron Radiation Laboratory (SSRL) for Ni is 8 x 10(7) atoms/cm(2) which is a factor of 50 better than what can be achieved using laboratory-based sources. SSRL has established a TXRF facility which meets the cleanliness and stability requirements of the semiconductor industry. This has enabled both industrial and academic researchers to address industrially relevant problems. In addition research is being carried out for the analysis of light elements such as Al and Na. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：222 / 226

页数：5

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