Single-wall carbon nanotube based devices

被引:38
作者
Lefebvre, J [1 ]
Antonov, RD
Radosavljevic, M
Lynch, JF
Llaguno, M
Johnson, AT
机构
[1] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA
[2] Univ Penn, Res Struct Matter Lab, Philadelphia, PA 19104 USA
关键词
carbon nanotubes; atomic force microscopy (AFM); transport properties;
D O I
10.1016/S0008-6223(00)00050-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have developed a variety of fabrication techniques for single-wall nanotube (SWNT) circuits. Our methods range from variants of electron beam lithography to AFM nanomanipulations. In this talk, we present our most recent data on three different types of SWNT based devices: the SWNT with a local impurity, the tube-tube junction and the SWNT contacted with electrodes whose separation is less than 30 nm. Each has a specific behavior ranging from a rectifying diode to a double quantum dot in series to an ultra short quantum wire. The functionality of each device can be ascribed to specific molecular adsorbates or controlled mechanical deformation. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1745 / 1749
页数:5
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