Selective area growth of aligned carbon nanotubes by ion beam surface modification

被引:8
作者
Gohel, A [1 ]
Chin, KC [1 ]
Lim, KY [1 ]
Tay, ST [1 ]
Liu, R [1 ]
Chen, GS [1 ]
Wee, ATS [1 ]
机构
[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
关键词
D O I
10.1016/S0009-2614(03)00245-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
O-2(+) ion beams are used to modify the surface of 50 nm thick Fe catalyst films deposited on Si(100) substrates to demonstrate selective area growth of aligned multiwall carbon nanotubes (MWNT). Aligned MWNTs were grown on the modified Fe/Si substrate using the hot filament plasma enhanced chemical vapor deposition (HF-PECVD) method. A higher growth rate and density of MWNTs was observed on the ion-modified areas, facilitating selective area growth of aligned MWNTs at temperatures as low as 560 degreesC. Deposition of graphitic sheets at the initial growth process on the unmodified areas inhibits the deposition of MWNTs. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:131 / 135
页数:5
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