Cryogenic etching of deep narrow trenches in silicon

Deep and narrow anisotropic etching of silicon structures has been investigated in a low-pressure high density plasma reactor working with a cryogenic chuck. We have previously demonstrated the feasibility of this technique on such structures. Improvement of etch rate and profiles has been studied and new results show 2 mu m wide trenches etched to a depth of 50 mu m at an average etch rate of 5 mu m/min with highly anisotropic profiles and very high selectivity (>500:1) toward the SiO2 mask. An evaluation of a commercially available reactor from Alcatel has been carried out and similar results an obtained. A phosphosilicate glass mask has been used to study the effect on profiles. It is shown that undercut is reduced while bowing is independent of the mask material. Since surface temperature strongly affects the profiles, wafer deformations in our cryogenic chuck have been measured and temperature evolution across the wafer has been estimated. A significant temperature difference of 10 degrees C between the chuck and the wafer is expected for thin wafers (210 mu m). (C) 2000 American Vacuum Society. [S0734-2101(00)16804-6].