Generating ∼90 nanometer features using near-field contact-mode photolithography with an elastomeric phase mask

被引：107

作者：

Rogers, JA ^{[1
]}

Paul, KE ^{[1
]}

Jackman, RJ ^{[1
]}

Whitesides, GM ^{[1
]}

机构：

[1] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 01期

关键词：

D O I：

10.1116/1.589836

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article describes a near-field photolithographic method that uses an elastomeric phase mask in conformal contact with photoresist. The method is capable of generating similar to 90 nm lines in commercially available photoresist, using broadband, incoherent light with wavelengths between 330 and 460 nm. Transfer of these patterns into silicon dioxide and gold demonstrates the integrity of the patterned resist. (C) 1998 American Vacuum Society.

引用

页码：59 / 68

页数：10

共 16 条

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