Low voltage E-beam irradiation: a new tool for suppression of airborne contamination effects in positive chemically amplified resists.

被引：5

作者：

Kudryashov, VA ^{[1
]}

Prewett, PD

Michette, AG

机构：

[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Region, Russia

[2] Rutherford Appleton Lab, Cent Microstruct Facil, Didcot OX11 0QX, Oxon, England

[3] Univ London Kings Coll, Dept Phys, London WC2R 2LS, England

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00046-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental investigation at energies of 2-6keV has been carried out on the positive chemically amplified resist AZPF 514. A new way of suppressing the "T-topping" effect, based on resist shower irradiation with low energy electrons, is suggested. This does not prevent contamination of the upper resist layer, but it does provide an easy method of removing the contaminated layer at the very start of resist development.

引用

页码：203 / 206

页数：4

共 4 条

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