Implementation of an all-electron GW approximation based on the projector augmented wave method without plasmon pole approximation:: Application to Si, SiC, AlAs, InAs, NaH, and KH -: art. no. 155208

被引:200
作者
Lebègue, S
Arnaud, B
Alouani, M
Bloechl, PE
机构
[1] Inst Phys & Chim Mat Strasbourg, CNRS, UMR 7504, F-67037 Strasbourg, France
[2] Univ Calif Davis, Dept Phys, Davis, CA 95616 USA
[3] GMCM, F-35042 Rennes, France
[4] Univ Calif Santa Barbara, Kavli Inst Theoret Phys, Santa Barbara, CA 93111 USA
[5] Tech Univ Clausthal, Inst Theoret Phys, D-38678 Clausthal Zellerfeld, Germany
关键词
D O I
10.1103/PhysRevB.67.155208
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An implementation of the GW approximation (GWA) based on the all-electron projector-augmented-wave (PAW) method is presented, where the screened Coulomb interaction is computed within the random-phase approximation (RPA) instead of the plasmon-pole model. Two different ways of computing the self-energy are reported. The method is used successfully to determine the quasiparticle energies of six semiconducting or insulating materials: Si, SiC, AlAs, InAs, NaH, and KH. To illustrate the method the real and imaginary part of the frequency-dependent self-energy together with the spectral function of silicon are computed. Finally, the GWA results are compared with other calculations, highlighting that all-electron GWA results can differ markedly from those based on pseudopotential approaches.
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页数:10
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