Stanford V program for locally extensive and advanced Hodgkin lymphoma: the Memorial Sloan-Kettering Cancer Center experience

被引:26
作者
Edwards-Bennett, S. M. [1 ]
Jacks, L. M. [2 ]
Moskowitz, C. H. [3 ]
Wu, E. J. [1 ]
Zhang, Z. [2 ]
Noy, A. [3 ]
Portlock, C. S. [3 ]
Straus, D. J. [3 ]
Zelenetz, A. D. [3 ]
Yahalom, J. [1 ]
机构
[1] Mem Sloan Kettering Canc Ctr, Dept Radiat Oncol, New York, NY 10065 USA
[2] Mem Sloan Kettering Canc Ctr, Dept Med, New York, NY 10065 USA
[3] Mem Sloan Kettering Canc Ctr, Dept Epidemiol & Biostat, New York, NY 10065 USA
关键词
combined modality; Hodgkin lymphoma; involved-field radiotherapy; Stanford V; DISEASE; ABVD; CHEMOTHERAPY; STANDARD; HAZARDS; MOPP;
D O I
10.1093/annonc/mdp337
中图分类号
R73 [肿瘤学];
学科分类号
100214 ;
摘要
Background: The Stanford group has reported excellent results with the Stanford V regimen for patients with bulky and/or advanced Hodgkin lymphoma (HL). However, Gobbi reported markedly inferior failure-free survival (FFS) comparing Stanford V to other regimens but included major deviations from the original program. We retrospectively examined whether treatment at our institution carefully following Stanford V guidelines would confirm the original Stanford outcome data. Patients and methods: From June 1995 to May 2002, 126 patients with either locally extensive or advanced HL were treated with the 12-week Stanford V chemotherapy program followed by 36-Gy involved-field radiotherapy to sites initially 5 cm and/or to macroscopic splenic disease. Overall, 26% had stage IV disease and 20% had international prognostic score (IPS)>= 4. Overall survival (OS), disease-specific survival, progression-free survival (PFS), FFS, and freedom from second relapse (FF2R) were determined. Results: The 5- and 7-year OS were 90% and 88%, respectively. The 5-year FFS was 78%. IPS 4 was a significant independent predictor of worse OS and PFS. The FF2R was 64% at 3 years. Conclusion: Stanford V with appropriate radiotherapy is a highly effective regimen for locally extensive and advanced HL.
引用
收藏
页码:574 / 581
页数:8
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