Amplified spontaneous emission in para-sexiphenyl bulk single crystals

被引：32

作者：

Losio, Paolo A. ^{[1
]}

Hunziker, Christoph ^{[1
]}

Guenter, Peter ^{[1
]}

机构：

[1] ETH, Nonlinera Opt Lab, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期

关键词：

D O I：

10.1063/1.2748086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amplified spontaneous emission (ASE) in single crystals of para-sexiphenyl grown in the beta phase by vapor transport is demonstrated upon photoexcitation at 355 nm. Excitation with femtosecond laser pulses leads to dual wavelength ASE at 427 and 450 nm, while excitation with nanosecond laser pulses leads to ASE only at 450 nm. The threshold fluences for nanosecond and femtosecond pumpings are determined to be 885 and 110 mu J/cm(2), respectively. Additionally, the singlet exciton annihilation rate is measured to be gamma(ss)=(1.2 +/- 0.1)x10(-6) cm(3) s(-1). (c) 2007 American Institute of Physics.

引用

页数：3

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