The influence of porous silicon on junction formation in silicon solar cells

被引：13

作者：

Drabczyk, K

Panek, P

Lipinski, M

机构：

[1] Silesian Tech Univ, Inst Elect, Gliwice, Poland

[2] Polish Acad Sci, Inst Met & Mat Sci, PL-00901 Warsaw, Poland

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 76卷 / 04期

关键词：

porous silicon; silicon solar cells;

D O I：

10.1016/S0927-0248(02)00265-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work the results of a structural investigation by SEM of porous silicon (PS) before and after diffusion processes are reported. The formation of PS n(+)/p structures were carried out on PS p/p silicon wafers with two methods: from POCl3 in a conventional furnace and from a phosphorous doped paste in an infrared furnace. Sheet resistance was found to be a strong function of PS structure. Further details on sheet resistance distribution are reported. The electrical contacts in prepared solar cells were obtained by screen printing process, with a Du Ponte photovoltaic silver paste for front contacts and home-prepared silver with 3% aluminium paste for the back ones. Metallization was done in the infrared furnace. Solar cell current-voltage characteristics were measured under an AM 1.5 global spectrum sun simulator. The average results for multi-crystalline silicon solar cells without antireflection coating are: I-sc = 720 (mA), V-oc = 560 (mV), FF = 69%, Eff = 10.6% (area 25 cm(2)). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：545 / 551

页数：7

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