Dopant-selective photoenhanced wet etching of GaN

被引：89

作者：

Youtsey, C ^{[1
]}

Bulman, G

Adesida, I

机构：

[1] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[3] CREE Res Inc, Durham, NC 27713 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 04期

基金：

美国国家科学基金会;

关键词：

dopant-selective etching; gallium nitride (GaN); photoenhanced etching; photoelectrochemical (PEC) etching;

D O I：

10.1007/s11664-998-0400-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg are lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.

引用

页码：282 / 287

页数：6

共 20 条

[1] REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS [J].