Integrated device based on conjugated oligoaniline

被引：3

作者：

Kuo, CT ^{[1
]}

Weng, SZ ^{[1
]}

机构：

[1] Tatung Univ, Dept Chem Engn, Taipei 104, Taiwan

来源：

POLYMERS FOR ADVANCED TECHNOLOGIES | 2002年 / 13卷 / 10-12期

关键词：

oligoaniline; field-effect transistor; light-emitting diode; integrated device; MEH-PPV; field-effect mobility; on-off current ratio; brightness;

D O I：

10.1002/pat.242

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

An integrated optoelectronic device is demonstrated with a high-mobility conjugated oligoaniline field-effect transistor (FET) driving a poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene)vinylene (MEH-PPV) light emitting diode (LED). The FET fabricated with oligoaniline (16-mer) thin film as the semiconductor layer exhibits ideal source current-drain-source voltage characteristics. Its performance is close to those of inorganic amorphous silicon FETs, with field-effect mobilities of 0.1-1.0 cm(2)/V s and on-off current ratio of 10(6). The FET-LED integrated device exhibits a current of 8 x 10(-4) A with the maximum brightness on the order of 10 cd/m(2) at gate voltage of -100 V and drain-source voltage of 60 V. Copyright (C) 2003 John Wiley Sons, Ltd.

引用

页码：753 / 758

页数：6

共 18 条

[1] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J].