The synthesis mechanism of complex oxide films formed in dense rf-plasma by reactive sputtering of stoichiometric targets

被引：53

作者：

Mukhortov, VM ^{[1
]}

Golovko, YI ^{[1
]}

Tolmachev, GN ^{[1
]}

Klevtzov, AN ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Gen Phys, Moscow 117333, Russia

来源：

FERROELECTRICS | 2000年 / 247卷 / 1-3期

关键词：

thin film; rf sputtering; complex oxide; ferroelectric; optical spectroscopy;

D O I：

10.1080/00150190008214943

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper presents new experimental data on the synthesis and crystallization of complex oxide films produced by rf sputtering of ceramic targets. The deposition system has threshold states, the transition through which sets off a qualitative modification of its properties. The main feature of this modification is the appearance of a new structured system in plasma.

引用

页码：75 / 83

页数：9

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