Monolithic DC-DC converter analysis and mosfet gate voltage optimization

被引:25
作者
Kursun, V [1 ]
Narendra, SG [1 ]
De, VK [1 ]
Friedman, EG [1 ]
机构
[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
来源
4TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, PROCEEDINGS | 2003年
关键词
D O I
10.1109/ISQED.2003.1194746
中图分类号
TP31 [计算机软件];
学科分类号
081202 ; 0835 ;
摘要
The design of an efficient monolithic buck converter is presented in this paper. A low swing MOSFET gate drive technique is proposed that improves the efficiency characteristics of a DC-DC converter. A model of the parasitic impedances of a buck converter is developed. With this model, a design space is described which characterizes the integration of both active and passive devices of a buck converter onto the same die based on a 0.18 mum CMOS technology. The optimum gate voltage swing of a power MOSFET that maximizes efficiency is shown to be lower than a standard full voltage swing. An efficiency of 88% at a switching frequency of 102 MHz is achieved for a voltage conversion from 1.8 volts to 0.9 volts with a low swing DC-DC converter. The power dissipation of a low swing DC-DC converter is reduced by 24.5%, improving the efficiency by 3.9% as compared to a full swing DC-DC converter.
引用
收藏
页码:279 / 284
页数:6
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