Ionization rates and critical fields in 4H SiC junction devices

被引：31

作者：

Konstantinov, AO ^{[1
]}

Wahab, Q

Nordell, N

Lindefelt, U

机构：

[1] IMC, ABB Corp Res, S-16421 Kista, Sweden

[2] Linkoping Univ, ABB Corp Res, S-58183 Linkoping, Sweden

[3] Ind Microelect Ctr, S-16421 Kista, Sweden

[4] ABB Corp Res, S-72178 Vasteras, Sweden

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

junction breakdown; blocking voltage; critical field; ionization rates;

D O I：

10.4028/www.scientific.net/MSF.264-268.513

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial p-n diodes in 4H SiC are fabricated with uniform avalanche multiplication and breakdown. Photomultiplication measurements were performed to determine electron and hole ionization rates, Theoretical values of critical fields anti breakdown voltages in 4H SiC are calculated using the ionization rates obtained. We discuss ionization mechanisms in 4H SiC and draw a comparison between silicon carbide and gallium nitride.

引用

页码：513 / 516

页数：4

共 8 条

[1]

Dmitriev VA, 1996, INST PHYS CONF SER, V142, P1019

[2]

KONSTANTINOV AO, 1987, SOV PHYS SEMICOND+, V21, P410

[3]

KONSTANTINOV AO, 1989, SOV PHYS SEMICOND+, V23, P31

[4] Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN [J].