Ultra-low dielectric constant low density material (k=2.2) for Cu damascene

被引：6

作者：

Cheng, YY ^{[1
]}

Chao, LC ^{[1
]}

Jang, SM ^{[1
]}

Yu, CH ^{[1
]}

Liang, MS ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, Res & Dev, Hsinchu, Taiwan

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have examined film properties of ultra-low dielectric constant low-density spin on glass with a dielectric constant of 2.2 (SOG-2.2). SOG-2.2 can stand higher shear strength and demonstrates better adhesion with PE-SiON than PE-SiN in scratch test. However, SOG-2.2 is damaged by conventional O2 plasma for photoresist stripping and also by wet processes for polymer removal. Using N2/H2 plasma for resist stripping, the damage can be minimized and moisture adsorption is significantly reduced, as evident in FTIR. In this work, SOG-2.2/Cu single damascene has been developed which demonstrates line-to-line capacitance reduction of 50%, compared with USG/Cu single damascene. Though there is leakage current in 0.23um narrow spacing Cu line, TEM examination suggests that no Cu diffusion in low density SOG-2.2 inter-metal dielectric.

引用

页码：161 / 163

页数：3