Observation of time-varying photoconductivity and persistent photoconductivity in porous silicon

被引：18

作者：

Frello, T ^{[1
]}

Veje, E ^{[1
]}

Leistiko, O ^{[1
]}

机构：

[1] TECH UNIV DENMARK,CTR MICROELECTR,DK-2800 LYNGBY,DENMARK

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 02期

关键词：

D O I：

10.1063/1.360890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed time-varying photoconductivity and persistent photoconductivity in porous silicon, both with time-evolution scales of the order of several minutes or hours. The time evolutions depend on the wavelength and the intensity of the illuminating light. The data indicate the presence of at least two competing mechanisms, one is tentatively related to photoinduced creation of charge carriers in the silicon substrate followed by diffusion into the porous silicon layer, and the other is tentatively related to desorption of hydrogen from the porous silicon. (C) 1996 American Institute of Physics.

引用

页码：1027 / 1031

页数：5

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