Estimation of diffusion lengths in CuInSe2-based cells using the photocurrent-capacitance method

被引:32
作者
Champness, CH [1 ]
机构
[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada
来源
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词
D O I
10.1109/PVSC.2002.1190669
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Measurements have been made on CIGS cells from ZSW, Germany to estimate minority diffusion lengths (L-n) using the photocurrent-capacitance method. An XY recorder was employed in the place of the earlier point-by-point method to measure dark and illuminated current with variation of reverse voltage to minimize drift effects. However, the obtained, L-n-values on the same cell had a wider spread of values than usual, with magnitudes too large to be acceptable. Nevertheless, it was found that pre-exposure of the cell to the light used during the measurements had a. stabilizing effect on the variation of dark current with reverse bias. As a result, part of the variation of the illuminated-to-dark current change with reciprocal capacitance was made more reproducible. Using different optical filters on light pre-soaked CIGS cells, L-n was estimated to be about 2.5 mum +/-40%.
引用
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页码:732 / 735
页数:4
相关论文
共 2 条
[1]  
CHAMPNESS CH, 2001, P 17 EUR PHOT SOL EN
[2]  
CHAMPNESS CH, 2001, 2 6 COMP SEM PHOT MA