Impact of illumination pupil-fill spatial variation on simulated imaging performance

被引:17
作者
Barrett, TC [1 ]
机构
[1] IBM Corp, Microelect Div, Essex Junction, VT 05452 USA
来源
OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2 | 2000年 / 4000卷
关键词
lithography; modeling; partial coherence; illumination; specification;
D O I
10.1117/12.389074
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Specifications for state-of-the-art projection lithography systems do not currently encompass the possible sources of variation that can and do exist in the spatial distribution of pupil fill created by the illuminators of these systems. An investigation into the types and magnitudes of these variations, for conventional and annular illumination, is presented. The variations are used to create a number of possible pupil-fill distributions. Using these pupil-fill distributions and typical amounts of low-order aberrations found in today's equipment as inputs, a simulation survey is presented of critical imaging needs in memory and logic cell fabrication. The amount of illumination-induced error predicted in placement, line-width abnormality, isolated-to-nested bias, and horizontal-to-vertical bias is used to recommend new spatial-illumination requirements for current and future needs of projection lithography.
引用
收藏
页码:804 / 817
页数:14
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