Negative differential resistance of electrons in graphene barrier

被引:88
作者
Dragoman, D.
Dragoman, M.
机构
[1] Univ Bucharest, Phys Dept, Bucharest 077125, Romania
[2] Natl Inst Res & Dev Microtechnol, Bucharest 023573, Romania
关键词
D O I
10.1063/1.2719670
中图分类号
O59 [应用物理学];
学科分类号
摘要
The graphene is a native two-dimensional crystal material consisting of a single sheet of carbon atoms. In this unique one-atom-thick material, the electron transport is ballistic and is described by a quantum relativisticlike Dirac equation rather than by the Schrodinger equation. As a result, a graphene barrier behaves very differently compared to a common semiconductor barrier. The authors show that a single graphene barrier acts as a switch with a very high on-off ratio and displays a significant differential negative resistance, which promotes graphene as a key material in nanoelectronics. (c) 2007 American Institute of Physics.
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页数:3
相关论文
共 6 条
[1]  
Dragoman D, 2004, FRONTIERS COLL
[2]  
DRAGOMAN M, 2006, ART HOUSE NANOTECHN, P1
[3]   Chiral tunnelling and the Klein paradox in graphene [J].
Katsnelson, M. I. ;
Novoselov, K. S. ;
Geim, A. K. .
NATURE PHYSICS, 2006, 2 (09) :620-625
[4]   Graphene: carbon in two dimensions [J].
Katsnelson, Mikhail I. .
MATERIALS TODAY, 2007, 10 (1-2) :20-27
[5]   Electric field effect in atomically thin carbon films [J].
Novoselov, KS ;
Geim, AK ;
Morozov, SV ;
Jiang, D ;
Zhang, Y ;
Dubonos, SV ;
Grigorieva, IV ;
Firsov, AA .
SCIENCE, 2004, 306 (5696) :666-669
[6]   Fabrication and electric-field-dependent transport measurements of mesoscopic graphite devices [J].
Zhang, YB ;
Small, JP ;
Pontius, WV ;
Kim, P .
APPLIED PHYSICS LETTERS, 2005, 86 (07) :1-3