A novel resist material for sub-100nm contact hole pattern

被引：15

作者：

Chung, JH ^{[1
]}

Choi, SJ ^{[1
]}

Kang, Y ^{[1
]}

Woo, SG ^{[1
]}

Moon, JT ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin City, Kyungki Do, South Korea

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷

关键词：

KrF lithography; contact hole pattern; thermal flow process; SMART; cross-linking reaction;

D O I：

10.1117/12.388315

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal flow process using a novel resist called the SMART (SaMsung Advanced Resist for Thermal flow process) was studied. The SMART consists of the conventional polyhydroxystyrene-based polymers and the additives inducing thermal cross-linking reactions with the base polymers. With the SMART resist, 240nm contact holes were defined by KrF lithography system. Then following one-step thermal flow resulted in down to 90nm contact holes with vertical sidewall profile. At 90nn resolution, the critical dimension (CD) variation on 200mm wafer was less than 20nm. Its etch selectivity to silicon oxide was improved due to the cross-linking reaction. The main feature of the SMART is one step process having the linear dependency of flow rate on baking temperature. The flow amount can be controlled within the range of 100-150nm without any significant pattern deformation. The thermal flow process using the SMART is a promising candidate for the fabrication of gigabit devices.

引用

页码：305 / 312

页数：4

共 3 条

[1]

ITO H, 1994, J PHOTOPOLY SCI TECH, P47

[2] 0.2 mu m lithography using I-line and alternating phase shift mask [J].

Schiavone, P ;

Lalanne, F .

OPTICAL MICROLITHOGRAPHY IX, 1996, 2726 :453-460

[3] Manipulation of the thermal properties of positive DUV polymers [J].

Sinta, R ;

Barclay, GG ;

Adams, TG ;

Medeiros, DR .

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII, 1996, 2724 :238-248

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