Interface scaling in the contact process

被引:32
作者
Dickman, R [1 ]
Muñoz, MA
机构
[1] Univ Fed Minas Gerais, ICEx, Dept Fis, BR-30161970 Belo Horizonte, MG, Brazil
[2] Univ Granada, Inst Carlos Theoret & Computat Phys 1, E-18071 Granada, Spain
[3] Univ Granada, Dept Electromagnetismo & Fis Mat, E-18071 Granada, Spain
来源
PHYSICAL REVIEW E | 2000年 / 62卷 / 06期
关键词
D O I
10.1103/PhysRevE.62.7632
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
A correspondence between lattice models with absorbing states and models of pinned interfaces in random media can be established by defining local height variables h(x,t) as integrals of the activity at point x up to time t. Within this context we study the interface representation of a prototypical model with absorbing states, thr contact process, in dimensions 1-3. Simulations confirm the scaling relation beta (W)=1-theta between the interface-width growth exponent beta (W) and the exponent theta governing the decay of the order parameter. A scaling property of the height distribution, which serves as the basis for this relation, is also verified. The height-height correlation function shows clear signs of anomalous scaling, In accord with Lopez analysis [Phys. Rev. Lett. 83, 4594 (1999)], but no evidence of multiscaling.
引用
收藏
页码:7632 / 7637
页数:6
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