Nanosecond risetime pulse characterization of SiC p+n junction diode breakdown and switching properties

被引:10
作者
Neudeck, PG
Fazi, C
机构
[1] NASA, Lewis Res Ctr, Cleveland, OH 44135 USA
[2] USA, Res Lab, Adelphi, MD 20783 USA
来源
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词
pn junction diode; rectifiers; minority carrier lifetime; reverse recovery; reverse breakdown; surface recombination; bulk recombination; solid-state power devices;
D O I
10.4028/www.scientific.net/MSF.264-268.1037
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Single-shot nanosecond risetime pulse testing of SiC devices is demonstrated to reveal unique and highly crucial device performance information not obtainable by conventional DC and RP electrical testing, This paper describes some strikingly important device behaviors observed during pulse-testing experiments of 4H-SiC p(+)n junction diodes. Specific observations include: 1) a remarkably fast and catastrophic diode failure mechanism in which an SiC diode fails at a fast-risetime pulse amplitude well. below the DC-measured breakdown voltage, 2) positive temperature coefficient of breakdown voltage behavior in selected 4H-SiC diodes, and 3) average minority carrier lifetimes extracted from reverse recovery switching transients that are dominated by device perimeter surface recombination effects instead of the carrier lifetime inherent to the bulk SiC material itself. All three of these pulse-revealed behaviors provide important insights into fundamental physical issues that impact the performance and reliability of SiC-based electronics, especially high-power SiC devices.
引用
收藏
页码:1037 / 1040
页数:4
相关论文
共 7 条
[1]   EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J].
HENRY, CH ;
LOGAN, RA ;
MERRITT, FR .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3530-3542
[2]  
NEUDECK G, 1989, PN JUNCTION DIODE, P111
[3]   High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodes [J].
Neudeck, PG ;
Fazi, C .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1219-1225
[4]   Positive temperature coefficient of breakdown voltage in 4H-SiC PN junction rectifiers [J].
Neudeck, PG ;
Fazi, C .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (03) :96-98
[5]  
NEUDECK PG, 1997, UNPUB J ELECT MAT
[6]  
NEUDECK PG, 1996, O 3 INT HIGH TEMP EL, V2, P15
[7]  
Sze S. M., 1981, PHYSICS SEMICONDUCTO, P61