p-Si nanowires/SiO2/n-ZnO heterojunction photodiodes

被引：54

作者：

Huang, Chun-Ying ^{[2
]}

Yang, Ying-Jay ^{[2
]}

Chen, Ju-Ying ^{[1
]}

Wang, Chun-Hsiung ^{[1
]}

Chen, Yang-Fang ^{[1
]}

Hong, Lu-Sheng ^{[3
]}

Liu, Chie-Sheng ^{[3
]}

Wu, Chia-Yin ^{[3
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 106, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 01期

关键词：

elemental semiconductors; etching; II-VI semiconductors; nanowires; passivation; photodiodes; semiconductor heterojunctions; semiconductor quantum wires; semiconductor thin films; silicon; silicon compounds; wide band gap semiconductors; zinc compounds; NANOWIRE;

D O I：

10.1063/1.3462319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Influence of a SiO2 ultrathin film on n-ZnO/p-silicon nanowires photodiodes has been investigated. With a SiO2 thin layer, the diode characteristics can be significantly improved, which exhibits high responsivity under a reverse bias. Based on the electron conversion efficiency measurement, we show that the ultrathin SiO2 layer with positive fixed charges not only acts as a hole blocking layer but also helps the photogenerated electrons to tunnel through the barrier. In addition, the SiO2 layer can effectively passivate the defects generated by wet etching process. It is expected that our approach can be extended to many other nanoscale heterojunction devices. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3462319]

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