Synthesis and characterization of core-shell GaP@GaN and GaN@GaP nanowires

被引:123
作者
Lin, HM
Chen, YL
Yang, J
Liu, YC
Yin, KM
Kai, JJ
Chen, FR
Chen, LC
Chen, YF
Chen, CC
机构
[1] Natl Taiwan Normal Univ, Dept Chem, Taipei 116, Taiwan
[2] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan
[3] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10764, Taiwan
[4] Acad Sinica, Inst Atom & Mol Sci, Taipei, Taiwan
关键词
D O I
10.1021/nl0340125
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A convenient thermal CVD route to core-shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm(-1) is found and assigned to a surface phonon mode.
引用
收藏
页码:537 / 541
页数:5
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