Cathodoluminescence studies of bound excitons and near band gap emission lines in boron- and phosphorus-doped CVD-diamonds

被引:16
作者
Sternschulte, H
Albrecht, T
Thonke, K
Sauer, R
Griesser, M
Grasserbauer, M
机构
来源
III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES | 1996年 / 423卷
关键词
D O I
10.1557/PROC-423-693
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cathodoluminescence measurements at cryogenic temperatures are reported on boron- and phosphorus-doped CVD-diamond films grown on silicon substrates. Boron and phosphorus concentrations were determined by SIMS measurements; for boron, they reached from unintentional background doping levels up to 3500 ppm At increasing boron concentrations, the radiative recombination of boron bound excitons (BE(TO)) at 5.22 eV photon energy systematically broadens and shifts down to 4.99 eV whereas the (FE(TO)) exciton emission (FE(TO)) disappears for 40 ppm and higher. In the phosphorus-doped films we observe new lines at 5.16 eV and 4.99 eV which we ascribe to TO- and (TO+O-Gamma)-phonon assisted transitions of an exciton bound to a shallow impurity other than boron, possibly phosphorus or a phosphorus-related shallow complex.
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页码:693 / 698
页数:6
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