Analysis and measurements of EM and substrate coupling effects in common RF integrated circuits

被引：6

作者：

Amaya, RE ^{[1
]}

Popplewell, PHR ^{[1
]}

Cloutier, M ^{[1
]}

Plett, C ^{[1
]}

机构：

[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada

来源：

PROCEEDINGS OF THE IEEE 2004 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2004年

关键词：

coupling circuits; electromagnetic coupling; inductors; resonators;

D O I：

10.1109/CICC.2004.1358823

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An investigation of coupling between inductors and resonators fabricated in Si substrates is presented and the effects on RF systems and components is discussed. EM simulators (e.g., Agilent Momentum) provide accurate near field analysis of coupling in lossy and complex silicon substrates. Measurements verify theory and a novel experimental technique to measure inductors and resonator coupling makes use of injection-lockable bipolar oscillators. The experiment is fast, accurate, and unique in that no matching, probe de-embedding, or calibration is necessary as the ratio of two on-chip signals is measured to yield the results. As an example, accounting for inductor coupling in a 4.7 GHz LNA reduces the amplifier's gain from 22 dB to 18 dB.

引用

页码：363 / 366

页数：4

共 5 条

[1]

BACK D, 2003, IEEE RFIC 2003 C, P85

[2] Silicon integrated high performance inductors in a 0.18μm CMOS technology for MMIC [J].