Bistable tunneling current through a molecular quantum dot

被引:72
作者
Alexandrov, AS
Bratkovsky, AM
Williams, RS
机构
[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA
[2] Loughborough Univ Technol, Dept Phys, Loughborough LE11 3TU, Leics, England
关键词
D O I
10.1103/PhysRevB.67.075301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An exact solution is presented for tunneling through a negative-U degenerate molecular quantum dot weakly coupled to electrical leads. The tunnel current exhibits hysteresis if the level degeneracy of the negative-U dot is larger than 2. Switching occurs in the voltage range V-1<V<V-2 as a result of attractive electron correlations in the molecule, which open up a new conducting channel when the voltage is above the threshold bias voltage V-2. Once this current has been established, the extra channel remains open as the voltage is reduced down to the lower threshold voltage V-1. The current hysteresis vanishes above some critical temperature. Possible realizations of bistable molecular quantum dots are fullerenes, especially C-60, and mixed-valence compounds.
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页数:4
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