Defects and metrology of ultrathin resist films

被引:11
作者
Okoroanyanwu, U [1 ]
Cobb, J [1 ]
Dentinger, P [1 ]
Henderson, C [1 ]
Rao, V [1 ]
Monahan, K [1 ]
Luo, D [1 ]
Pike, C [1 ]
机构
[1] Adv Micro Devices Inc, Sunnyvale, CA 94088 USA
来源
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XIV | 2000年 / 3998卷
关键词
ultrathin resist; pinholes; metrology; defects; 157-nm and EUV lithography;
D O I
10.1117/12.386506
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Defectivity in spin-coated, but unpatterned ultrathin resist (UTR) films (less than or equal to 1000 Angstrom) was studied in order to determine whether defectivity will present an issue in EUV (13.4-nm) and 157-nm lithographic technologies. These are the lithographic regimes where absorption issues mandate the use of ultrathin resists. Four resist samples formulated from the same Shipley UV6 polymer batch and having the same polymer molecular weight properties but different viscosities, were spin-coated at spin speeds ranging from 1000 to 5000 RPM on a production-grade track in a Class 1 pilot line facility. Defect inspection was carried out with KLA SP1/TBI tool, while defect review was carried out with JEOL 7515 SEM tool and KLA Ultrapointe Confocal Review Station (CRS) Microscope. The results obtained are related to the physical properties of the resist polymers, as well as to spin coating parameters. Also, the results of the defect inspection, review, characterization, and pareto are compared to those obtained on baseline thick resists (greater than or equal to 3500 Angstrom) processed under similar condition as the ultra-thin resists. The results show that for a well-optimized coating process and within the thickness range explored (800-4200 Angstrom), there is no discernible dependence of defectivity on film thickness of the particular resists studied and on spin speed. Also assessed is the capability of the current metrology toolset for inspecting, reviewing, and classifying the various types of defects in UTR films.
引用
收藏
页码:515 / 526
页数:12
相关论文
共 10 条
[1]   High resolution structure imaging of octahedral void defects in as-grown Czochralski silicon [J].
Bender, H ;
Vanhellemont, J ;
Schmolke, R .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB) :L1217-L1220
[2]   CHARACTERIZATION OF AZ PN114 RESIST FOR SOFT-X-RAY PROJECTION LITHOGRAPHY [J].
EARLY, K ;
TENNANT, DM ;
JEON, DY ;
MULGREW, PP ;
MACDOWELL, AA ;
WOOD, OR ;
KUBIAK, GD ;
TICHENOR, DA .
APPLIED OPTICS, 1993, 32 (34) :7044-7049
[3]   Characterization of crystal quality by crystal originated particle delineation and the impact on the silicon wafer surface [J].
Graf, D ;
Suhren, M ;
Lambert, U ;
Schmolke, R ;
Ehlert, A ;
von Ammon, W ;
Wagner, P .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (01) :275-284
[4]   ULTRATHIN POLYMER-FILMS FOR MICROLITHOGRAPHY [J].
KUAN, SWJ ;
FRANK, CW ;
FU, CC ;
ALLEE, DR ;
MACCAGNO, P ;
PEASE, RFW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2274-2279
[5]   Outlook for 157-nm resist design [J].
Kunz, RR ;
Bloomstein, TM ;
Hardy, DE ;
Goodman, RB ;
Downs, DK ;
Curtin, JE .
MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 :13-23
[6]  
KUNZ RR, 1992, IEEE LITH WORKSH
[7]   DEFECT STUDIES ON SINGLE AND BILAYER RESIST SYSTEMS [J].
MULLER, KP ;
SACHDEV, HS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06) :2560-2564
[8]  
NGUYEN KB, 1999, J VAC SCI TECHNOL B, V17
[9]   SCANNING TUNNELING MICROSCOPY AND ATOMIC FORCE MICROSCOPY CHARACTERIZATION OF POLYSTYRENE SPIN-COATED ONTO SILICON SURFACES [J].
STANGE, TG ;
MATHEW, R ;
EVANS, DF ;
HENDRICKSON, WA .
LANGMUIR, 1992, 8 (03) :920-926
[10]  
Vollrath W., 1999, Semiconductor International, V22, P54