Hydrogen populations in PECVD a-Si:H,D

被引：4

作者：

Cull, TS ^{[1
]}

Kernan, MJ ^{[1
]}

Chan, PH ^{[1
]}

Fedders, PA ^{[1
]}

Leopold, DJ ^{[1
]}

Norberg, RE ^{[1
]}

Wickboldt, P ^{[1
]}

Paul, W ^{[1
]}

机构：

[1] Washington Univ, Dept Phys, St Louis, MO 63130 USA

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton NMR and deuteron NMR (DMR) have been used to measure hydrogen populations in a series of PECVD a-Si:H,D films. The sharp DMR doublet from Si-D is fitted and subtracted out. The residual spectra then show specific signatures for molecular D-2 and KD. The fitting procedures yield quantitative measures of Si-bonded and molecular species. A particular comparison is made between a pair of films prepared as the powered and unpowered electrodes in the same plasma deposition. Both silicon-bonded and molecular populations are significantly different in the two films and correlate with photoresponse products eta mu r and with IR as well as other materials characterizations.

引用

页码：123 / 128

页数：6