Hydrogen populations in PECVD a-Si:H,D

被引:4
作者
Cull, TS [1 ]
Kernan, MJ [1 ]
Chan, PH [1 ]
Fedders, PA [1 ]
Leopold, DJ [1 ]
Norberg, RE [1 ]
Wickboldt, P [1 ]
Paul, W [1 ]
机构
[1] Washington Univ, Dept Phys, St Louis, MO 63130 USA
来源
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷
关键词
D O I
10.1557/PROC-467-123
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Proton NMR and deuteron NMR (DMR) have been used to measure hydrogen populations in a series of PECVD a-Si:H,D films. The sharp DMR doublet from Si-D is fitted and subtracted out. The residual spectra then show specific signatures for molecular D-2 and KD. The fitting procedures yield quantitative measures of Si-bonded and molecular species. A particular comparison is made between a pair of films prepared as the powered and unpowered electrodes in the same plasma deposition. Both silicon-bonded and molecular populations are significantly different in the two films and correlate with photoresponse products eta mu r and with IR as well as other materials characterizations.
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页码:123 / 128
页数:6
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