Fluorine in silicon: Diffusion, trapping, and precipitation

被引：68

作者：

Pi, XD ^{[1
]}

Burrows, CP ^{[1
]}

Coleman, PG ^{[1
]}

机构：

[1] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevLett.90.155901

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12 +/- 0.08 eV. After a long annealing time at 700 degreesC, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range.

引用

页码：4 / 155901

页数：4

共 23 条

[1] Transition from small interstitial clusters to extended {311} defects in ion-implanted Si [J].