Switchable low-loss RF MEMS Ka-band frequency-selective surface

被引:125
作者
Schoenlinner, B [1 ]
Abbaspour-Tamijani, A
Kempel, LC
Rebeiz, GM
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Radiat Lab, Ann Arbor, MI 49109 USA
[2] Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA
关键词
frequency selective surface (FSS); microelectromechanical devices; quasi-optical; RF microelectromechanical systems (MEMS); tunable filters;
D O I
10.1109/TMTT.2004.837148
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A switchable frequency-selective surface (FSS) was developed at 30 GHz using RF microelectromechanical systems (MEMS) switches on a 500-mum-thick glass substrate. The 3-in-diameter FSS is composed of 909 unit cells and 3636 MEMS bridges with a yield of 99.5%. The single-pole FSS shows a transmission loss of 2.0 dB and a -3-dB bandwidth of 3.2 GHz at a resonant frequency of 30.2 GHz with the MEMS bridges in the up-state position. The -1-dB bandwidth is 1.6 GHz. When the MEMS bridges are actuated to the down-state position, an insertion loss of 27.5 dB is measured. Theory and experiment agree quite well. The power handling is limited to approximately 25 W with passive air cooling and >150 W with active air cooling due to the increased temperature of the overall circuit resulting from the transmission loss (for continuous-wave operation with the assumed maximum allowable temperature of 80degreesC), or 370 W-3.5. kW due to self-actuation of the RF MEMS bridges (for pulsed incident power). Experimental results validate that 20 W of continuous-wave power can be transferred by the RF MEMS FSS with no change in the frequency response. This is the first demonstration of a switched low-loss FSS at Ka-band frequencies.
引用
收藏
页码:2474 / 2481
页数:8
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