Ab initio calculation of excitonic effects in the optical spectra of semiconductors

被引：837

作者：

Albrecht, S ^{[1
]}

Reining, L

Del Sole, R

Onida, G

机构：

[1] Ecole Polytech, CNRS, CEREM, CEA,URA 1380,Lab Solides Irradies, F-91128 Palaiseau, France

[2] Univ Roma Tor Vergata, Dipartimento Fis, Ist Nazl Fis Mat, I-00133 Rome, Italy

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.80.4510

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An ab initio approach to the calculation of excitonic effects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle band structure calculation and is based on the relevant Bethe-Salpeter equation. An application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental spectrum, for both peak positions and line shape.

引用

页码：4510 / 4513

页数：4

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