Phase diagram of the integer quantum Hall effect in p-type germanium

被引:34
作者
Hilke, M
Shahar, D [1 ]
Song, SH
Tsui, DC
Xie, YH
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 11期
关键词
D O I
10.1103/PhysRevB.62.6940
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We experimentally study the phase diagram of the integer quantized Hall effect, as a function of density and magnetic field. We used a two-dimensional hole system confined in a Ge/SiGe quantum well, where all energy levels are resolved, because the Zeeman splitting is comparable to the cyclotron energy. At low fields and close to the quantum Hall Liquid-to-insulator transition. we observe the Boating up of the lowest energy level due to the disorder broadening, but no floating of any higher levels, rather a merging of these levels into the insulating state. For a given filling factor, only direct transitions between the insulating phase and higher quantum Hall liquids are observed as a function of density. Finally, we observe a peak in the critical resistivity around a filling factor of 1.
引用
收藏
页码:6940 / 6943
页数:4
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